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| SPN3055 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3055 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications FEATURES 30V/12A,RDS(ON)= 60m@VGS=10V 30V/ 6A,RDS(ON)= 80m@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252-2L package design APPLICATIONS Power Management in Desktop Computer DC/DC Converter LCD Display inverter PIN CONFIGURATION (TO-252-2L) PART MARKING 2006/08/16 Ver.3 Page 1 SPN3055 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 ORDERING INFORMATION Part Number SPN3055T252RG Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN3055T252RG : Tape Reel ; Pb - Free Package TO-252-2L Part Marking SPN3055 Symbol G S D Description Gate Source Drain ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Drain-Source Voltage Gate -Source Voltage Continuous Drain Current(TJ=150) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical 30 20 12 8 20 12 40 20 150 -55/150 100 Unit V V A A A W /W 2006/08/16 Ver.3 Page 2 SPN3055 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA VDS=0V,VGS=20V VDS=24V,VGS=1.0V IDSS VDS=24V,VGS=0.0V TJ=55 VGS = 10V,ID=12A RDS(on) VGS =4.5V,ID= 6A gfs VDS=10V,ID=12A VSD IS= 6A,VGS=0V IGSS 30 1.0 3.0 100 1 10 0.050 0.067 20 1.0 0.060 0.080 1.2 V nA uA S V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=15V,VGS=10V ID12A 4.5 0.8 1.0 240 110 17 8 10 nC VDS=15V,VGS=0V f=1MHz pF 20 30 35 20 ns VDD=15V ,RL=15 ID1.0A,VGEN=10V RG=6 12 17 8 2006/08/16 Ver.3 Page 3 SPN3055 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/08/16 Ver.3 Page 4 SPN3055 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/08/16 Ver.3 Page 5 SPN3055 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/08/16 Ver.3 Page 6 SPN3055 N-Channel Enhancement Mode MOSFET TO-252-2L PACKAGE OUTLINE 2006/08/16 Ver.3 Page 7 SPN3055 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. (c)The SYNC Power logo is a registered trademark of SYNC Power Corporation (c)2004 SYNC Power Corporation - Printed in Taiwan - All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 (c)http://www.syncpower.com 2006/08/16 Ver.3 Page 8 |
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